MSP0330D - MORESEMI

MSP0330D P-Channel Enhancement Mode Power MOSFET

MSP0330D -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Lead Free Applic.

Features

● VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Lead Free Application
● High side switch for full bridge converter
● DC/DC converter for LCD display PIN Configuration Marking and pin assignment TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSP0330D MSP0330D TO-252-2L Reel Size - Tape width - Quantity.