MSK4105 - MSK

MSK4105 HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE

The MSK4105 is a hermetic high temperature half bridge configuration SiC (Silicon Carbide) power MOSFET design with parallel SiC recovery diodes. The hermetic design makes it ideal for use in oil/gas/down-hole, aerospace and other extreme environment applications. The MSK4105 is capable of 10 amps of continuous output current at Tc=190°C. The 600V rating ma.

Features

Operational From -55°C to 190°C Half Bridge Configuration Silicon Carbide Power MOSFETS Silicon Carbide Recovery Diodes 600V Rated Voltage 20A Continuous Output Current at Tc=25°C 10A Continuous Output Current at Tc=190°C Available in Three Lead Bend Configurations Package Isolated for High Voltage Isolation Contact MSK for MIL-PRF-38534 Qualification Status DESCRIPTION: The MSK4105 is a hermetic high temperature half bridge configuration SiC (Silicon Carbide) power MOSFET design with parallel SiC recovery diodes. The hermetic design makes it ideal for use in oil/gas/down-hole, aerospace and .