MSF6N70 - Bruckewell Technology

MSF6N70 700V N-Channel MOSFET

The MSF6N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications FEATURES • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast S.

Features

• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant / Halogen free package available Absolute Maximum Ratings Parameter Drain-Source Voltage (Tc=25°C unless otherwise noted) Symbol VDS ID ID IDM VGS EAS IAR EAR dV/dt PD Tj, Tstg Value 700 6.0 3.5 22 ±30 350 5.5 14.7 5.5 48 0.38 -55~+150 Unit V A A A V mJ A mJ V/ns W W °C Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dV/.