MSC3003 - Advanced Semiconductor

MSC3003 NPN SILICON RF POWER TRANSISTOR

The ASI MSC3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES: • PG = 6.0 dB min. at 3 W / 3,000 MHz • Difused Ballast Resistor • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740.

Features

• PG = 6.0 dB min. at 3 W / 3,000 MHz
• Difused Ballast Resistor
• Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 60 mA 30 V 10 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 17 °C/W B C D E F G H I J K L M N P .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .0.