MSB1218A-ST1 - Motorola

MSB1218A-ST1 PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSB1218A–RT1/D PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package which is designed for low power surface mount applications..

Features

on(1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150
  – 55 ~ + 150 Unit mW °C °C ELECTRICAL CHARACTERISTICS Characteristic Collector
  –Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector
  –Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter
  –Base Breakdown Voltage (IE = 10 µAdc, IE = 0) Collector
  –Base Cutoff Current (VCB = 20 Vdc, IE = 0) Collector
  –Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) DC Current Gain(2) (VCE = 10 Vdc, IC = 2.0 mAdc) Collector
  –Emitter Saturation Voltage(2) (IC = 100 mAdc, IB = 10 mAdc) MSB1218A
  –RT1 MSB1218A
  –ST1 VCE(sat) Symbol V(BR)CE.