MS4N1350B - maspower

MS4N1350B N-channel MOSFET

MasPower has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summar Order codes Marking MS4N1350 MS4N1350 MS4N135.

Features

Type VDSS MS4N1350FW 1500 V MS4N1350 1500 V MS4N1350B 1500 V MS4N1350E 1500 V MS4N1350W 1500 V RDS(on) max. <9Ω <9Ω <9Ω <9Ω <9Ω ID PTOT 4 A 63 W 4 A 140 W 4 A 140 W 4 A 80 W 4 A 140 W
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF plastic package
■ Creepage distance path is 5.4 mm (typ.) for TO-3PF Application Switching applications Description MasPower has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary .