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MS2421 - Advanced Power Technology

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MS2421 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

The MS2421 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN. The MS2421 is designed with internal input/output matching resulting in improved broadband performance and low thermal resistance. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS VCES VCBO .

Features

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• DESIGNED









• FOR HIGH POWER PULSED IFF, DME, AND TACAN APPLICATIONS 350 W (typ.) IFF 1030
  – 1090 MHz 300 W (min.) DME 1025
  – 1150 MHz 290 W (typ.) TACAN 960
  – 1215 MHz 960
  – 1215 MHz GOLD METALLIZATION POUT = 300W MINIMUM GP = 6.3 dB MINIMUM INFINITE VSWR CAPABILITY @ RATED CONDITIONS EMITTER BALLASTED COMMON BASE DESCRIPTION: The MS2421 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME, and TACAN. The MS2421 is designed with internal input/output matching resultin.

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