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The MS2214 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter DataSheet4U.com ballasting provides long term reliability under JTIDS and similar pulse formats. DataShee ABSOLUTE MAXIMUM RATINGS Symbol VCC IC PDISS TJ T STG (Tcase = 25° C) Value 40 8.0 300 +250 - 65 to + .
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• GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 85 W MINIMUM Gp = 7.5 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE
DESCRIPTION:
The MS2214 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter DataSheet4U.com ballasting provides long term reliability under JTIDS and similar pulse formats.
DataShee
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC IC PDISS TJ
T STG
(Tcase = 25° C)
Value
40 8.0 300 +250 - 65 to + 200
Parameter
Collector-Supply Voltage
* Device Current
* Power Dissi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MS2210 |
CIT Relay |
CIT SWITCH |
|
| 2 | MS2210 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
|
| 3 | MS2211 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
|
| 4 | MS2211 |
CIT Relay |
CIT SWITCH |
|
| 5 | MS2212 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
|
| 6 | MS2213 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS |
|
| 7 | MS2215 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
|
| 8 | MS2215 |
CIT Relay |
CIT SWITCH |
|
| 9 | MS2219 |
CIT Relay |
CIT SWITCH |
|
| 10 | MS2200 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS |
|
| 11 | MS2200 |
Thomson |
SERVICE MANUAL |
|
| 12 | MS2201 |
CIT Relay |
CIT SWITCH |
|