The MS2206 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse DataSheet4U.com conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. DataShee ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS VCE TJ IC T STG Parameter Power Dis.
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• 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION
.280 4LSL (M115) Epoxy Sealed
DESCRIPTION:
The MS2206 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse DataSheet4U.com conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.
DataShee
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
PDISS VCE TJ IC T STG
Parameter
Power Dissipation Collector-Emitter Bias Voltage Junction Temp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MS2200 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS | |
2 | MS2200 |
Thomson |
SERVICE MANUAL | |
3 | MS2201 |
CIT Relay |
CIT SWITCH | |
4 | MS2202 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | |
5 | MS2202 |
CIT Relay |
CIT SWITCH | |
6 | MS2203 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | |
7 | MS2204 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS | |
8 | MS2205 |
CIT Relay |
DPDT Switch Function | |
9 | MS2207 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS | |
10 | MS2207 |
CIT Relay |
CIT SWITCH | |
11 | MS2208 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION | |
12 | MS2208 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION |