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MS2206 - Advanced Power Technology

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MS2206 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

The MS2206 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse DataSheet4U.com conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. DataShee ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS VCE TJ IC T STG Parameter Power Dis.

Features







• 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 4LSL (M115) Epoxy Sealed DESCRIPTION: The MS2206 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse DataSheet4U.com conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. DataShee ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS VCE TJ IC T STG Parameter Power Dissipation Collector-Emitter Bias Voltage Junction Temp.

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