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The MS1642 is a gold metallized silicon NPN transistor designed for general purpose amplifier applications in the VHF and UHF frequency bands. Diffused emitter ballast resistors and computer controlled wirebonding techniques ensure maximum device reliability and consistency. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS IC(max) T STG VCBO VCEO VEBO.
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• 400 MHz GOLD METALLIZATION POUT = 10 W MINIMUM GP = 12 dB MINIMUM INFINITE VSWR CAPABILITY COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1642 is a gold metallized silicon NPN transistor designed for general purpose amplifier applications in the VHF and UHF frequency bands. Diffused emitter ballast resistors and computer controlled wirebonding techniques ensure maximum device reliability and consistency.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
PDISS IC(max) T STG VCBO VCEO VEBO
Parameter
Power Dissipation
* Device Current
* Storage Temperature Collector
– Base Voltage Col.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MS1645 |
Microsemi Corporation |
(MS1635 - MS1645) 16 AMP SCHOTTKY BARRIER RECTIFIER |
|
| 2 | MS1649 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS |
|
| 3 | MS16 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 4 | MS16100 |
Microsemi Corporation |
(MS1680 - MS16100) 16 AMP SCHOTTKY RECTIFIER |
|
| 5 | MS16180 |
EIC |
(MS16180 / MS16200) Schottky Barrier Rectifiers |
|
| 6 | MS16200 |
EIC |
(MS16180 / MS16200) Schottky Barrier Rectifiers |
|
| 7 | MS1635 |
Microsemi Corporation |
(MS1635 - MS1645) 16 AMP SCHOTTKY BARRIER RECTIFIER |
|
| 8 | MS1650 |
Microsemi Corporation |
(MS1650 - MS1660) 16 Amp Schottky Barrier Rectifiers |
|
| 9 | MS16535-14 |
Military Specification |
Oval Head |
|
| 10 | MS16535-xx |
Military Specification |
Oval Head |
|
| 11 | MS16535H |
Military Specification |
Oval Head |
|
| 12 | MS16535J |
Military Specification |
Oval Head |
|