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MS1527 - Advanced Power

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MS1527 RF & MICROWAVE TRANSISTORS

The MS1527 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for superior ruggedness. The MS1527 can withstand 20:1 VSWR under rated operating conditions and is internally input matched to optimize power gain and efficiency over the band. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC P.

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• 400 MHz 28 VOLTS POUT = 25 WATTS GP = 9 dB GAIN MINIMUM EMITTER BALLASTED METAL/CERAMIC PACKAGE INTERNAL INPUT MATCHING REFRACTORY/GOLD METALIZATION DESCRIPTION: The MS1527 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for superior ruggedness. The MS1527 can withstand 20:1 VSWR under rated operating conditions and is internally input matched to optimize power gain and efficiency over the band. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emit.

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