MRF9100 - Motorola

MRF9100 26 V LATERAL N-CHANNEL RF POWER MOSFETs

22 pF, 100B Chip Capacitors, ATC #100B220GW 2.2 pF, 100B Chip Capacitors, ATC #100B2R2BW 6.8 pF, 100B Chip Capacitor, ATC #100B6R8CW 10 pF, 100B Chip Capacitors, ATC #100B100GW 33 pF, 100B Chip Capacitors, ATC #100B330JW 4.7 pF, 100B Chip Capacitors, ATC #100B4R7BW 2.7 pF, 100B Chip Capacitor, ATC #100B2R7BW 10 µF, 35 V Tantalum Chip Capacitor, Vishay–Spragu.

Features

0R3 MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N
  –CHANNEL RF POWER MOSFETs CASE 465
  –06, STYLE 1 (NI
  –780) (MRF9100) CASE 465A
  –06, STYLE 1 (NI
  –780S) (MRF9100SR3) MAXIMUM RATINGS Rating Drain
  –Source Voltage Gate
  –Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15,
  –0.5 175 1.0
  –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum) THERMAL CHAR.