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The MRF616 is Designed for Common Emitter Class C Amplifier Applications in 12.5 Volt UHF Mobile Radios. PACKAGE STYLE .280" 4L PILL A E C E B FEATURES INCLUDE: • High Gain, 11 DB Typical • Gold Metallization • Emitter Ballasting ØB ØC MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC O O D E F 250 mA 36 V DIM MINIMUM inches / mm MAXIMUM inches / mm 5.0 W .
INCLUDE:
• High Gain, 11 DB Typical
• Gold Metallization
• Emitter Ballasting
ØB
ØC
MAXIMUM RATINGS
IC VCBO PDISS TJ TSTG θJC
O O
D E F
250 mA 36 V
DIM MINIMUM
inches / mm
MAXIMUM
inches / mm
5.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 35 C/W
O O O
O
A B C D E F
.220 / 5.59
.230 / 5.84 1.055 / 26.80
.275 / 6.99 .004 / 0.10 .050 / 1.27 .118 / 3.00
.285 / 7.24 .006 / 0.15 .060 . 1.52 .130 / 3.30
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO hFE COB PG ηC IC = 5.0 mA IC = 50 mA IE = 1.0 mA VCE = 5.0 V
TC = 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36 16 4.0
UNITS
V V V ---.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF604 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 2 | MRF604 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 3 | MRF607 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 4 | MRF607 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 5 | MRF607 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 6 | MRF626 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 7 | MRF627 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 8 | MRF627 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 9 | MRF628 |
Motorola |
UHF AMPLIFIER TRANSISTOR |
|
| 10 | MRF629 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 11 | MRF629 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 12 | MRF630 |
Motorola |
UHF AMPLIFIER TRANSISTOR |
|