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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these de.
CDMA and Multi
–Carrier Applications
MRF20060 MRF20060S
60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR
CASE 451
–04, STYLE 1 (MRF20060)
ee DataSh
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CASE 451A
–01, STYLE 1 (MRF20060S)
MAXIMUM RATINGS
Rating Collector
–Emitter Voltage (IB = 0 mA) Collector
–Emitter Voltage Collector
–Base Voltage Collector
–Emitter Voltage (RBE = 100 Ohm) Base
–Emitter Voltage Collector Current
– Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VCBO VCER VEB IC PD Tstg TJ Rating Thermal Resistance, Junction to C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF20060R |
Motorola |
RF POWER BIPOLAR TRANSISTOR |
|
| 2 | MRF20060RS |
Motorola |
RF POWER BIPOLAR TRANSISTOR |
|
| 3 | MRF20060S |
Motorola |
RF Power Bipolar Transistors |
|
| 4 | MRF2001 |
Motorola Semiconductor |
Microwave Power Transistors |
|
| 5 | MRF2001B |
Motorola Semiconductor |
Microwave Power Transistors |
|
| 6 | MRF2001M |
Motorola Semiconductor |
Microwave Power Transistors |
|
| 7 | MRF20030 |
Motorola |
RF POWER TRANSISTOR |
|
| 8 | MRF206 |
NKK |
Half-Inch Diameter Process Sealed Rotaries |
|
| 9 | MRF207 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 10 | MRF21010LR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|
| 11 | MRF21010LR1 |
Motorola |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
|
| 12 | MRF21010LSR1 |
Freescale Semiconductor |
RF Power Field Effect Transistors |
|