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NXP Semiconductors Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation. Typical Performance: VDD = 50 Vdc Freq.
Internally input pre--matched for ease of us.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF13750HS |
NXP |
RF Power LDMOS Transistors |
|
| 2 | MRF137 |
Tyco Electronics |
N-CHANNEL MOS BROADBAND RF POWER FET |
|
| 3 | MRF137 |
Motorola |
N-CHANNEL MOS BROADBAND RF POWER FET |
|
| 4 | MRF137 |
MA-COM |
The RF MOSFET |
|
| 5 | MRF134 |
Tyco Electronics |
N-CHANNEL MOS BROADBAND RF POWER FET |
|
| 6 | MRF134 |
Motorola |
N-CHANNEL MOS BROADBAND RF POWER FET |
|
| 7 | MRF136 |
MA-COM |
The RF MOSFET |
|
| 8 | MRF136 |
Tyco Electronics |
N-CHANNEL MOS BROADBAND RF POWER FET |
|
| 9 | MRF136 |
Motorola |
N-CHANNEL MOS BROADBAND RF POWER FETs |
|
| 10 | MRF136 |
ASI |
RF POWER FIELD-EFFECT TRANSISTOR |
|
| 11 | MRF136Y |
Motorola |
N-CHANNEL MOS BROADBAND RF POWER FETs |
|
| 12 | MRF10005 |
Tyco |
The RF Line Microwave Power Transistor |
|