An active low chip select for the serial MRAM. When chip select is high, the memory is powered down to minimize standby power, inputs are ignored and the serial output pin is Hi-Z. Multiple serial memories can share a common set of data pins by using a unique chip select for each memory. The data output pin is driven during a read operation and remains Hi-Z .
• No write delays
• Unlimited write endurance
• Data retention greater than 20 years
• Automatic data protection on power loss
• Block write protection
• Fast, simple SPI interface with up to 40 MHz clock rate
• 2.7 to 3.6 Volt power supply range
• Low current sleep mode
• Industrial temperatures
• Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant
packages
• Direct replacement for serial EEPROM, Flash, FeRAM
• AEC-Q100 Grade 1 Option
MR25H10
1Mb Serial SPI MRAM
DFN
Small Flag DFN
INTRODUCTION
The MR25H10 is a 1,048,576-bit magnetoresistive random access memory (MRAM).
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MR25H256 |
Everspin Technologies |
256Kb Serial SPI MRAM | |
2 | MR25H256A |
Everspin Technologies |
256Kb Serial SPI MRAM | |
3 | MR25H40 |
Everspin |
4Mb SPI Interface MRAM | |
4 | MR2500 |
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES | |
5 | MR2500 |
DIOTEC |
25AMP BUTTON DIODES | |
6 | MR2500 |
Motorola |
MEDIUM-CURRENT SILICON RECTIFIERS | |
7 | MR2500L |
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES | |
8 | MR2501 |
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES | |
9 | MR2501 |
DIOTEC |
25AMP BUTTON DIODES | |
10 | MR2501 |
Motorola |
MEDIUM-CURRENT SILICON RECTIFIERS | |
11 | MR2501L |
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES | |
12 | MR2502 |
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES |