Vol.02-06-e / June2002 MR2000 Series Standby Compatible Partial Resonance Power Supply IC Module with High-speed IGBT Shigeru Hisada - Electronic Device Div.Group Advanced Power Products Div. Device Design Dept. (Joined the company in 1991) 1 Introduction Development of the MR2000 Series Energy conservation guidelines from the Ministry of Economy, Trade .
Current consumption is reduced with use of the burst mode, promoting standby compatibility with a single converter. The optimized switching device provides ideal partial resonance operation for high efficiency and low noise. The 900V resistant switching device (high-speed IGBT) simplifies design of power supplies for worldwide input. Power consumption under micro-load is extremely low (burst mode). Use of a drain kick circuit eliminates the need for a start-up resistor. The use of a soft drive circuit reduces noise. Incorporates an over-current protection function (primary current detect, Ton.
MR2540 VBR : 20 Volts Io : 50 Amperes FEATURES : * Avalanche Voltage 24 to 32 Volts * High Power capability * Increased .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MR2540L |
EIC discrete Semiconductors |
AUTOMOTIVE TRANSIENT SUPPRESSORS | |
2 | MR2500 |
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES | |
3 | MR2500 |
DIOTEC |
25AMP BUTTON DIODES | |
4 | MR2500 |
Motorola |
MEDIUM-CURRENT SILICON RECTIFIERS | |
5 | MR2500L |
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES | |
6 | MR2501 |
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES | |
7 | MR2501 |
DIOTEC |
25AMP BUTTON DIODES | |
8 | MR2501 |
Motorola |
MEDIUM-CURRENT SILICON RECTIFIERS | |
9 | MR2501L |
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES | |
10 | MR2502 |
EIC discrete Semiconductors |
AUTOMOTIVE RECTIFIER DIODES | |
11 | MR2502 |
ON Semiconductor |
Medium-Current Silicon Rectifiers | |
12 | MR2502 |
DIOTEC |
25AMP BUTTON DIODES |