MPS8050S - Korea Electronics

MPS8050S EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8550S. L MPS8050S EPITAXIAL PLANAR NPN TRANSISTOR E B L 2 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL V.

Features

hFE(1) TEST CONDITION VCB=35V, IE=0 VEB=6V, IC=0 IC=100 A, IE=0 IC=2mA, IB=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=10V, IC=50mA VCB=10V, f=1MHz, IE=0 300 MIN. 40 25 45 85 40 100 TYP. 135 160 110 0.28 0.98 0.66 190 9 MAX. 100 100 300 0.5 1.2 1.0 V V V MHz pF UNIT nA nA V V DC Current Gain hFE(2) (Note) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(2) Classification VCE(sat) VBE(sat) VBE fT Cob B:85 160 , C : 120 2.