MPS6507 - Motorola

MPS6507 Amplifier Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS6507/D Amplifier Transistor NPN Silicon 2 BASE COLLECTOR 3 MPS6507 1 EMITTER MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ .

Features

ge (IC = 100 mAdc, IE = 0) Emitter
  – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 60°C) V(BR)CEO V(BR)CBO V(BR)EBO ICBO — — — — 50 1.0 nAdc mAdc 20 30 3.0 — — — — — — Vdc Vdc Vdc ON CHARACTERISTICS DC Current Gain(2) (IC = 2.0 mAdc, VCE = 10 Vdc) hFE 25 75 — — SMALL
  –SIGNAL CHARACTERISTICS Current
  –Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small
  –Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, f = 20 MHz) 1. RqJA is measured with the dev.