www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS4124/D Amplifier Transistor NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS4124 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C To.
age (IC = 10 m A, IE = 0) Emitter
– Base Breakdown Voltage (IC = 0, IE = 10 m A) Collector Cutoff Current (VCB = 20 V, IE = 0) Emitter Cutoff Current (VEB = 3.0 V, IC = 0) V(BR)CEO 25 V(BR)CBO 30 V(BR)EBO 5.0 ICBO — IEBO — 50 50 nAdc — nAdc — Vdc — Vdc Vdc
(Replaces MPS4123/D)
Motorola Small
–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997
1
MPS4124
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mA, VCE = 1.0 V) (IC = 50 mA, VCE = 1.0 V) Collector
– Emitter Satur.
www.DataSheet4U.com MPS4124 Amplifier Transistor NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATING.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MPS4123 |
Motorola |
(MPS4123 / MPS4124) Amplifier Transistors | |
2 | MPS4125 |
Motorola |
(MPS4125 / MPS4126) Amplifier Transistors | |
3 | MPS4126 |
Motorola |
(MPS4125 / MPS4126) Amplifier Transistors | |
4 | MPS4126 |
ON Semiconductor |
PNP Transistor | |
5 | MPS4100 |
BOWEI |
Fixecd PLL synthesizer | |
6 | MPS4101-012S |
Microsemi |
CONTROL DEVICE MONOLITHIC | |
7 | MPS4102-013S |
Microsemi |
CONTROL DEVICE MONOLITHIC | |
8 | MPS404 |
Motorola |
CHOPPER TRANSISTOR | |
9 | MPS404A |
Motorola |
Chopper Transistor | |
10 | MPS406 |
BOWEI |
Fixecd PLL synthesizer | |
11 | MPS4250 |
Motorola |
Transistor | |
12 | MPS4250 |
Samsung |
PNP Transistor |