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MPS2907A - ON Semiconductor

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MPS2907A General Purpose Transistors

MPS2907A Preferred Device General Purpose Transistors PNP Silicon http://onsemi.com COLLECTOR 3 Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg –55 to +150 Watts mW/°C °C 1 2 3 mW mW/°C TO–92 CASE 29 STYLES 1, 14 Value –60 –60 –5.0 –600 Unit Vdc Vdc Vdc mAdc 1 EMITTER STYLE 1 2 BASE MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Vol.

Features

mo Pack Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2001 1 October, 2001
  – Rev. 0 Publication Order Number: MPS2907A/D www.DataSheet4U.com MPS2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (Note 1.) (IC =
  –10 mAdc, IB = 0) Collector
  –Base Breakdown Voltage (IC =
  –10 mAdc, IE = 0) Emitter
  –Base Breakdown Voltage (IE =
  –10 mAdc, IC = 0) Collector Cutoff Current (VCE =
  –30 Vdc, VEB(off) =
  –0.5 Vdc) Co.

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SYMBOL MPS2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power .

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SYMBOL MPS2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power .

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