MP4013 - Toshiba Semiconductor

MP4013 TOSHIBA Power Transistor Module

MP4013 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors 4 in One) MP4013 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching Industrial Applications Unit: mm • • • • • Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : P.

Features

g 4.0 150 −55 to 150 W °C °C Array Configuration 3 5 7 9 2 1 R1 R2 4 6 8 10 R1 ≈ 5 kΩ R2 ≈ 300 Ω 1 2004-07-01 MP4013 Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4 devices operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C Symbol Max Unit ΣRth (j-a) 31.3 °C/W Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Saturation v.