MP10N50EI - JILIN SINO

MP10N50EI N-CHANNEL MOSFET

N N- CHANNEL MOSFET R MP10N50EI MAIN CHARACTERISTICS ID 10 A VDSS 500 V Rdson-max（@Vgs=10V） 0.70Ω Qg-typ 34.38nC Package   -  UPS APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  UPS FEATURES  Low gate charge  Crss ( 16.6pF) Low Crss (typical 16.6pF )  Fast switch.

Features


Low gate charge
 Crss ( 16.6pF)
Low Crss (typical 16.6pF )
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Fast switching

100% avalanche tested
 dv/dt
Improved dv/dt capability
RoHS
RoHS product ORDER MESSAGE - Halogen-Tube MP10N50EI-F1-B Order codes - - Halogen-Free-Tube Halogen-Reel MP10N50EI-F1-BR N/A - Halogen-Free-Reel N/A Marking MP10N50EI Package TO-220MF-K1 ：202307A 1/8 R ABSOLUTE RATINGS (Tc=25℃) MP10N50EI Parameter Symbol Value Unit － Drain-Source Voltage VDSS 500 V Drain Current -continuous ID T=25℃ T=100℃ （ 1） Drain Current -pulse （note 1） Gate-Source Voltage （ .