MOC70P - Fairchild Semiconductor

MOC70P PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH

The MOC70PX consists of an infrared light emitting diode coupled to an NPN silicon phototransistor packaged into an injection molded housing. The housing is designed for wide gap, non contact sensing. 0.250 [6.35] 0.506 [12.85] 0.200 [5.08] NOM 0.153 [3.89] 2X C L 0.080 [2.03] NOM FEATURES 0.270 [6.86] • No contact sensing • 5 mm gap SCHEMATIC 1 4 0.05.

Features

0.270 [6.86]
• No contact sensing
• 5 mm gap SCHEMATIC 1 4 0.050 [1.27] 0.140 [3.56] 0.105 [2.67] 0.380 [9.65] PIN 2 CATHODE PIN 3 (COLLECTOR) SEATING PLANE 0.020 [0.51] 4 X
• .040” aperture
• Low profile
• PCB mount
• Transistor output 2 3 0.100 [2.54] NOTES PIN 1 (ANODE) PIN 4 (EMITTER) NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 1. Derate power dissipation linearly, on each component, 1.67 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are .