Bias Resistor Transistor PNP Silicon MMUN2111 Series 1 BASE R1 R2 COLLECTOR 3 2 EMITTER 3 1 2 SOT-23 Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO VCBO IC Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1)TA=25 C Derate a.
ries WE ITR ON Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collector-Emitter Breakdown Voltage (IC=2.0mA, IB=0) Collector-Base Breakdown Voltage (IC=10 uA ,IE=0) Collector-Base Cutoff Voltage (VCB=50 V, IE =0) Collector-Emitter Cutoff Current (VCE=50V, IB=0) Emitter-Base Cutoff Current (VEB=6.0V, IC=0) MMUN2111 MMUN2112 MMUN2113 MMUN2114 MMUN2115 MMUN2116 MMUN2130 MMUN2131 MMUN2132 MMUN2133 MMUN2134 V(BR)CEO V(BR)CBO ICBO ICEO IEBO 50 50 - - - --V -- 100 V nA - 500 nA - 0.5 mA 0.2 - 0.1 - 0.2 - 0.9 .
MMUN2111…MMUN2134 PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applicat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMUN2111 |
Leshan Radio Company |
Bias Resistor Transistor | |
2 | MMUN2111 |
SEMTECH |
PNP Silicon Epitaxial Planar Transistor | |
3 | MMUN2111 |
WEITRON |
Bias Resistor Transistor PNP Silicon | |
4 | MMUN2111L |
ON Semiconductor |
Digital Transistors | |
5 | MMUN2111LT1 |
Motorola |
PNP SILICON BIAS RESISTOR TRANSISTOR | |
6 | MMUN2111LT1 |
Leshan Radio Company |
Bias Resistor Transistors | |
7 | MMUN2111RLT1 |
Leshan Radio Company |
Bias Resistor Transistor | |
8 | MMUN2112 |
WEITRON |
Bias Resistor Transistor PNP Silicon | |
9 | MMUN2112 |
Leshan Radio Company |
Bias Resistor Transistor | |
10 | MMUN2112 |
SEMTECH |
PNP Silicon Epitaxial Planar Transistor | |
11 | MMUN2112L |
ON Semiconductor |
Digital Transistors | |
12 | MMUN2112LT1 |
ON Semiconductor |
PNP SILICON BIAS RESISTOR TRANSISTOR |