MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF7P03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMSF7P03HD Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors Single HDTMOS are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. HDTMOS devices are desi.
d, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO
–8 Package Provided
SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 35 mW
™
D CASE 751
–05, Style 13 SO
–8 G S Source Source Source Gate 1 2 3 4 8 7 6 5 Drain Drain Drain Drain
Top View
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain
–to
–Source Voltage Gate
–to
–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Single Pulse (tp ≤ 10 µs) Source Current — Continuous @ TA = 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single P.
MMSF7P03HD Preferred Device Power MOSFET 7 A, 30 V, P−Channel SO−8 These miniature surface mount devices are designed fo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMSF7N03HD |
Motorola |
SINGLE TMOS POWER MOSFET | |
2 | MMSF7N03HD |
ON Semiconductor |
Power MOSFET | |
3 | MMSF7N03Z |
Motorola |
SINGLE TMOS POWER MOSFET | |
4 | MMSF7N03Z |
ON Semiconductor |
Power MOSFET | |
5 | MMSF10N02Z |
Motorola |
SINGLE TMOS POWER MOSFET | |
6 | MMSF10N02Z |
ON Semiconductor |
Power MOSFET | |
7 | MMSF10N03Z |
ON Semiconductor |
Power MOSFET | |
8 | MMSF10N03Z |
Motorola |
SINGLE TMOS POWER MOSFET | |
9 | MMSF1308 |
ON Semiconductor |
Power MOSFET | |
10 | MMSF1308R2 |
ON Semiconductor |
Power MOSFET | |
11 | MMSF1310 |
ON Semiconductor |
Power MOSFET | |
12 | MMSF2P02E |
Motorola |
SINGLE TMOS POWER MOSFET |