MMSF3P03HD Preferred Device Power MOSFET 3 Amps, 30 Volts P−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOSt devices are designed for use.
rive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA = 100°C Drain Current − Single.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF3P03HD/D Designer's ™ Data Sheet Medium Power Surf.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMSF3P02HD |
Motorola |
SINGLE TMOS POWER MOSFET | |
2 | MMSF3P02HD |
ON Semiconductor |
Power MOSFET | |
3 | MMSF3205 |
Motorola |
SINGLE TMOS POWER MOSFET | |
4 | MMSF3300 |
Motorola |
SINGLE TMOS POWER MOSFET | |
5 | MMSF3305 |
Motorola |
SINGLE TMOS POWER MOSFET | |
6 | MMSF3350 |
ON Semiconductor |
Single N-Channel MOSFET | |
7 | MMSF10N02Z |
Motorola |
SINGLE TMOS POWER MOSFET | |
8 | MMSF10N02Z |
ON Semiconductor |
Power MOSFET | |
9 | MMSF10N03Z |
ON Semiconductor |
Power MOSFET | |
10 | MMSF10N03Z |
Motorola |
SINGLE TMOS POWER MOSFET | |
11 | MMSF1308 |
ON Semiconductor |
Power MOSFET | |
12 | MMSF1308R2 |
ON Semiconductor |
Power MOSFET |