The MMLP57F linear sensor utilizes a unique push-pull Wheatstone bridge composed of four unshielded TMR sensor elements. The unique bridge design provides a high sensitivity differential output that is linearly proportional to a magnetic field applied parallel to the surface of the sensor package, and it provides superior temperature compensation of the .
n Tunneling Magnetoresistance (TMR) Technology n Compatible with Wide Range of Supply Voltages n Extremely Low Power Consumption n Excellent Thermal Stability n Very Low Hysteresis Applications n Magnetic Field Sensing n Current Sensors n Displacement Sensing n Rotary Position Sensors Absolute Maximum Ratings Parameter Symbol Supply Voltage VCC Storage Temperature Tstg Magnetic Field B ESD level Limit 7 -50 ~ 150 2000 4000 Unit V °C Oe1 V Specification (VCC=1.0V, TA=25 °C, Differential Output) Parameter Symbol Conditions Min Supply Voltage VCC Supply Current ICC Resistance.
The MMLP57F linear sensor utilizes a unique push-pull Wheatstone bridge composed of four unshielded TMR sensor elements..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MML09211HT1 |
Freescale Semiconductor |
Enhancement Mode pHEMT | |
2 | MML09212HT1 |
Freescale Semiconductor |
Enhancement Mode pHEMT | |
3 | MML102 |
HITANO |
METAL FILM RESISTOR | |
4 | MML1225 |
Dc Components |
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS | |
5 | MML20211HT1 |
Freescale Semiconductor |
Enhancement Mode pHEMT | |
6 | MML20242HT1 |
Freescale Semiconductor |
Enhancement Mode pHEMT | |
7 | MML204 |
HITANO |
METAL FILM RESISTOR | |
8 | MML207 |
HITANO |
METAL FILM RESISTOR | |
9 | MML4401 |
Microsemi |
MRI Protection Diodes | |
10 | MML4402 |
Microsemi |
MRI Protection Diodes | |
11 | MML4403 |
Microsemi |
MRI Protection Diodes | |
12 | MML60R190P |
MagnaChip |
N-channel MOSFET |