The MMLH45F linear sensor utilizes a unique push-pull Wheatstone bridge composed of four unshielded TMR sensor elements. This bridge design provides a high sensitivity differential output that is linearly proportional to a magnetic field applied parallel to the surface of the sensor package, in addition to providing superior temperature compensation of the o.
Tunneling Magnetoresistance (TMR) Technology
High Sensitivity 12 mV/V/Oe
Compatible with Wide Range of Supply Voltages
Extremely Low Power Consumption
Excellent Thermal Stability
Applications
Magnetic Field Sensing
Current Sensors
Displacement Sensing
Rotary Position Sensors
General Description
The MMLH45F linear sensor utilizes a unique push-pull Wheatstone bridge composed of four unshielded TMR sensor elements. This bridge design provides a high sensitivity differential output that is linearly proportional to a magnetic field applied parallel to the surface of the sensor pa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MML09211HT1 |
Freescale Semiconductor |
Enhancement Mode pHEMT | |
2 | MML09212HT1 |
Freescale Semiconductor |
Enhancement Mode pHEMT | |
3 | MML102 |
HITANO |
METAL FILM RESISTOR | |
4 | MML1225 |
Dc Components |
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS | |
5 | MML20211HT1 |
Freescale Semiconductor |
Enhancement Mode pHEMT | |
6 | MML20242HT1 |
Freescale Semiconductor |
Enhancement Mode pHEMT | |
7 | MML204 |
HITANO |
METAL FILM RESISTOR | |
8 | MML207 |
HITANO |
METAL FILM RESISTOR | |
9 | MML4401 |
Microsemi |
MRI Protection Diodes | |
10 | MML4402 |
Microsemi |
MRI Protection Diodes | |
11 | MML4403 |
Microsemi |
MRI Protection Diodes | |
12 | MML60R190P |
MagnaChip |
N-channel MOSFET |