MMHS70R1K4P - MagnaChip

MMHS70R1K4P N-Channel MOSFET

MMHS70R1K4P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj.

Features

 Low Power Loss by High Speed Switching and Low On-Resistance
 100% Avalanche Tested
 Green Package
  – Pb Free Plating, Halogen Free
 Applications
 PFC Power Supply Stages
 Switching Applications
 Ordering Information Order Code Marking MMHS70R1K4PRH 70R1K4P Temp. Range -55 ~ 150 oC Package SOT-223-2L Packing Reel RoHS Status Compliant Jan. 2021. Revision 1.3 1 Magnachip Semiconductor Ltd. MMHS70R1K4P Datasheet
 Absolute Maximum Rating (Tc=25 oC unless otherwise specified) Parameter Drain
  – Source voltage Gate
  – Source voltage Continuous drain current Pulsed drain current.