MMFT60R190Q - MagnaChip

MMFT60R190Q N-channel MOSFET

MMFT60R190Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj.

Features

 Low Power Loss by High Speed Switching and Low On-Resistance
 100% Avalanche Tested
 Green Package
  – Pb Free Plating, Halogen Free
 Applications
 PFC Power Supply Stages
 Switching Applications
 Adapter
 Motor Control
 DC
  – DC Converters
 Ordering Information Order Code Marking MMFT60R190QTH T60R190Q Temp. Range -55 ~ 150℃ Sep. 2022. Revision 1.1 1 Package TO-220FT Packing Tube RoHS Status Halogen Free Magnachip Semiconductor Ltd. MMFT60R190Q Datasheet
 Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Symbol Rating Unit Note Drain
  – Source vo.