MMF80R1K2QZ - MagnaChip

MMF80R1K2QZ N-channel MOSFET

MMF80R1K2QZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj.

Features

 Low Power Loss by High Speed Switching and Low On-Resistance
 Excellent ESD robustness
 100% Avalanche Tested
 Green Package
  – Pb Free Plating, Halogen Free
 Applications
 PFC Power Supply Stages
 Switching Applications
 Adapter
 Ordering Information Order Code Marking Temp. Range Package MMF80R1K2QZTH 80R1K2QZ -55 ~ 150 oC TO-220F(3L) Jun. 2023. Revision 1.3 1 Packing Tube RoHS Status Compliant Magnachip Semiconductor Ltd. MMF80R1K2QZ Datasheet
 Absolute Maximum Rating (Tc=25 oC unless otherwise specified) Parameter Drain
  – Source voltage Gate
  – Source voltage Symbol .