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The UTC MMDT5551 is a high voltage fast-switching dual NPN transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number MMDT5551G-AL6-R Package SOT-363 Pin Assignment 123456 E1 B.
* High Collector-Emitter Voltage: VCEO=160V
* High current gain
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number MMDT5551G-AL6-R
Package SOT-363
Pin Assignment 123456 E1 B1 C2 E2 B2 C1
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R218-022.C
MMDT5551
DUAL TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
180
V
Collector -Emitter Voltage
VCEO
160
V
Emitter -Base Voltage
VEBO
6
V
DC Collector Current
IC 600 mA
Po.
MMDT5551 - Diodes Incorporated
MMDT5551 160V DUAL NPN HIGH-VOLTAGE TRANSISTOR IN SOT363 Features • Epitaxial Planar Die Construction • Complementary P.
MMDT5551 - GME
Production specification Dual NPN Small Signal Surface Mount Transistor FEATURES Epitaxial planar die construction. .
MMDT5551 - LITE-ON
NPN/NPN Multi-Chip Transistor MMDT5551 FEATURES • Ideal for Medium Power Amplification and Switching • Complementary P.
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|---|---|---|---|---|
| 1 | MMDT5210W |
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| 2 | MMDT5211W |
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| 3 | MMDT5212W |
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| 4 | MMDT5213W |
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| 5 | MMDT5214W |
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| 6 | MMDT5215W |
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| 7 | MMDT5216W |
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| 8 | MMDT5217W |
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| 9 | MMDT5218W |
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| 10 | MMDT5219W |
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| 11 | MMDT521DW |
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| 12 | MMDT521EW |
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