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MMDT1P434 - SEMTECH

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MMDT1P434 PNP Silicon Epitaxial Planar Transistor

MMDT1P434 PNP Silicon Epitaxial Planar Transistor for switching and interface circuit and drive circuit applications Collector (Output) Base (Input) R1 R2 Emitter (Common) Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Par.

Features


• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and manufacturing process SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value 50 50 6 100 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 5 mA www.DataSheet4U.com Collector Base Cutoff Current at -VCB = 50 V Coll.

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