MMD60R900Q - MagnaChip

MMD60R900Q N-channel MOSFET

MMD60R900Q is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,.

Features

 Low power loss by high speed switching and low on-resistance
 100% avalanche tested
 Green Package
  – Pb-free plating, Halogen-free
 Applications
 PFC power supply stages
 Switching applications
 Adapter
 Ordering Information Order Code MMD60R900QRH Marking 60R900Q Temp. Range -55 ~ 150oC Package TO-252 Packing RoHS Status Reel Compliant Jun. 2021. Revision 1.2 1 Magnachip Semiconductor Ltd. MMD60R900Q Datasheet
 Absolute Maximum Rating (Tc=25oC unless otherwise specified) Parameter Symbol Rating Unit Note Drain
  – Source voltage Gate
  – Source voltage Continuous drai.