MMD25R210RZ - MagnaChip

MMD25R210RZ N-channel MOSFET

MMD25R210RZ is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI and low switching loss as well as excellent ESD capability to designers.  Key P.

Features

 Low power loss by high speed switching and low on-resistance
 100% avalanche tested
 Green package
  – Pb free plating, halogen free
 Zener - integrated
 Applications
 Switching applications
 DC-DC converters
 Motor control
 Ordering Information Order Code Marking MMD25R210RZRH 25R210RZ Temp. Range -55 ~ 150oC Package TO-252 Packing Reel RoHS Status Compliant Aug. 2024 Revision 1.3 Magnachip Semiconductor Ltd. MMD25R210RZ Datasheet
 Absolute Maximum Rating (Tc=25oC unless otherwise specified) Parameter Drain - source voltage Gate - source voltage Symbol VDSS VGSS Con.