www.DataSheet4U.com MMBV609LT1 Preferred Device Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top−of−the−line application requiring back−to−back diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT−23 plastic package for high volume, pick and place asse.
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High Figure of Merit − Q = 450 (Typ) @ VR = 3.0 Vdc, f = 50 MHz Guaranteed Capacitance Range Dual Diodes − Save Space and Reduce Cost Surface Mount Package Available in 8 mm Tape and Reel Monolithic Chip Provides Improved Matching Hyper Abrupt Junction Process Provides High Tuning Ratio Pb−Free Package is Available
DUAL VOLTAGE VARIABLE CAPACITANCE DIODE
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MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Va.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode This device is designed for FM tuning, general frequency con.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMBV609 |
Leshan Radio Company |
Silicon Tuning Diode | |
2 | MMBV105G |
Motorola |
VOLTAGE VARIABLE CAPACITANCE DIODE | |
3 | MMBV105GLT1 |
Motorola |
Silicon Tuning Diode | |
4 | MMBV105GLT1 |
Leshan Radio Company |
Silicon Tuning Diode | |
5 | MMBV105GLT1 |
ON |
Silicon Tuning Diode | |
6 | MMBV109 |
Motorola |
VOLTAGE VARIABLE CAPACITANCE DIODE | |
7 | MMBV109LT1 |
Motorola |
Silicon Epicap Diodes | |
8 | MMBV109LT1 |
Leshan Radio Company |
Silicon Epicap Diode | |
9 | MMBV109LT1 |
ON Semiconductor |
Silicon Epicap Diodes | |
10 | MMBV2101LT1 |
Motorola |
Silicon Tuning Diode | |
11 | MMBV2101LT1 |
ON |
Silicon Tuning Diodes | |
12 | MMBV2101LT1 |
LRC |
Silicon Tuning Diode |