MMBTA63 / MMBTA64 PNP Silicon Epitaxial Planar Transistor for general purpose application, darlington transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -.
at) -VBE(on) fT Min. 5000 10000 10000 20000 - - 30 - - 125 Max. - 100 100 - 1.5 2 - Unit - nA nA V V V MHz SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 MMBTA63 / MMBTA64 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 .
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) CHARACTERISTI.
The UTC MMBTA63-64 is a Darlington transistor. FEATURES * Collector-Emitter Voltage: VCES = -30V * Collector current u.
Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Com.
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuo.
Production specification PNP Darlington Amplifier Transistor FEATURES Epitaxial planar die construction. Complemen.
MPSA63 / MMBTA63 / PZTA63 Discrete POWER & Signal Technologies MPSA63 MMBTA63 C PZTA63 C E C B E C B TO-92 E SOT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMBTA63LT1 |
Motorola |
Transistors | |
2 | MMBTA63LT1 |
ON |
PNP Transistors | |
3 | MMBTA63LT1G |
ON Semiconductor |
Darlington Transistors | |
4 | MMBTA64 |
GME |
PNP Darlington Amplifier Transistor | |
5 | MMBTA64 |
SEMTECH |
PNP Transistor | |
6 | MMBTA64 |
UTC |
DARLINGTON TRANSISTOR | |
7 | MMBTA64 |
Fairchild |
PNP Transistor | |
8 | MMBTA64 |
Diodes Incorporated |
PNP TRANSISTOR | |
9 | MMBTA64 |
MCC |
PNP Darlington Transistor | |
10 | MMBTA64 |
WEITRON |
Darlington Transistor PNP Silicon | |
11 | MMBTA64 |
Motorola |
DARLINGTON TRANSISTOR | |
12 | MMBTA64 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |