MMBTA55LT1 - Motorola

MMBTA55LT1 Driver Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA55LT1/D Driver Transistors PNP Silicon 1 BASE COLLECTOR 3 MMBTA55LT1 MMBTA56LT1* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC MMBTA55 –60 –60 –4.0 –500.

Features

Min Max Unit OFF CHARACTERISTICS Collector
  – Emitter Breakdown Voltage(3) (IC =
  –1.0 mAdc, IB = 0) Emitter
  – Base Breakdown Voltage (IE =
  –100 mAdc, IC = 0) Collector Cutoff Current (VCE =
  –60 Vdc, IB = 0) Collector Cutoff Current (VCB =
  –60 Vdc, IE = 0) Collector Cutoff Current (VCB =
  –80 Vdc, IE = 0) MMBTA55 MMBTA56 MMBTA55 MMBTA56 V(BR)CEO V(BR)EBO ICES ICBO
  –60
  –80
  –4.0 — — — — — —
  –0.1
  –0.1
  –0.1 Vdc Vdc µAdc µAdc ON CHARACTERISTICS DC Current Gain (IC =
  –10 mAdc, VCE =
  –1.0 Vdc) DC Current Gain (IC =
  –100 mAdc, VCE =
  –1.0 Vdc) Collector
  – Emitter Saturation Voltage (IC =
  –100 mAdc, IB .