MMBTA517 - KEC

MMBTA517 EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation VCBO VCEO VEBO IC PC * 40 30 10 400 350 Junction Temperature Tj 150 Storage Temperature Tstg -55 150 * : Pa.

Features

ion Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Collector Output Capacitance Cob TEST CONDITION IC=0.1mA IC=10mA IE=-1.0mA VCB=40V VEB=10V IC=100mA, VCE=2V IC=100mA, IB=1mA IC=100mA, IB=10mA IC=100mA, f=100MHz, VCE=2V VCB=10V, f=1MHz MIN. 40 30 10 30K - TYP. 1.5 220 5 MAX. 1 1 1 2 - UNIT V V V A A V V MHz pF 1999. 11. 30 Revision No : 3 1/2 MMBTA517 1999. 11. 30 Revision No : 3 2/2 .