www.DataSheet4U.com MMBTA13LT1, MMBTA14LT1 MMBTA14LT1 is a Preferred Device Darlington Amplifier Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 300 Unit .
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 300 Unit Vdc Vdc Vdc mAdc 1 2 Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 1x 556 mW mW/°C °C/W Max Unit
COLLECTOR 3 BASE 1
EMITTER 2
3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate .
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTA13LT1/D Darlington Amplifier Transistors NPN Silico.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMBTA13LT1G |
ON Semiconductor |
Darlington Amplifier Transistors | |
2 | MMBTA13L |
ON Semiconductor |
Darlington Amplifier Transistors | |
3 | MMBTA13 |
GME |
NPN Darlington Amplifier Transistor | |
4 | MMBTA13 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
5 | MMBTA13 |
Samsung |
NPN DARLINGTON AMPLIFIER TRANSISTOR | |
6 | MMBTA13 |
Diodes Incorporated |
NPN SURFACE MOUNT DARLINGTON TRANSISTOR | |
7 | MMBTA13 |
Micro Commercial Components |
NPN Darlington Amplifier Transistor | |
8 | MMBTA13 |
Fairchild |
NPN Darlington Transistor | |
9 | MMBTA13 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors | |
10 | MMBTA13 |
LITE-ON |
NPN MULTI-CHIP TRANSISTOR | |
11 | MMBTA13 |
Motorola |
DARLINGTON AMPLIFIER TRANSISTOR | |
12 | MMBTA13 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |