MMBT8099 - TAITRON

MMBT8099 SMD General Purpose Transistor

MMBT8099 Unit Conditions VCBO VCEO VEBO IC Marking Code Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current KB 80 V 80 V 6.0 V 0.5 A Ptot RθJA Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/° C Derate above 25 ˚C 556 ° C /W Ptot Power Dissipation (Note 2) .

Features

• NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (NPN) MMBT8099 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT8099 Unit Conditions VCBO VCEO VEBO IC Marking Code Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current KB 80 V 80 V 6.0 V 0.5 A Ptot RθJA Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) 22.