MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT404ALT1/D Chopper Transistor PNP Silicon COLLECTOR 3 1 BASE MMBT404ALT1 Motorola Preferred Device 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –35 –40 –25 –150 U.
ted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
–Emitter Breakdown Voltage (IC =
–10 mAdc, IB = 0) Collector
–Emitter Breakdown Voltage (IC =
–10 µAdc, IE = 0) Emitter
–Base Breakdown Voltage (IE =
–10 µAdc, IC = 0) Collector Cutoff Current (VCB =
–10 Vdc, IE = 0) Emitter Cutoff Current (VEB =
–10 Vdc, IC = 0) Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO
–35
–40
–25 — —
— — — — —
— — —
–100
–100
Vdc Vdc Vdc nAdc nAdc
Motorola Small.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMBT404A |
ETC |
The Small-Signal PNP Silicon Chopper Low-Power Transistor | |
2 | MMBT404A |
Motorola |
CHOPPER TRANSISTOR | |
3 | MMBT404 |
Motorola |
CHOPPER TRANSISTOR | |
4 | MMBT4123 |
Samsung |
NPN (GENERAL PURPOSE TRANSISTOR) | |
5 | MMBT4124 |
TRSYS |
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
6 | MMBT4124 |
Samsung |
NPN (GENERAL PURPOSE TRANSISTOR) | |
7 | MMBT4124 |
Diodes Incorporated |
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
8 | MMBT4124 |
Fairchild |
NPN General Purpose Amplifier | |
9 | MMBT4124 |
TAITRON |
SMD General Purpose Transistor | |
10 | MMBT4124 |
MEI SEMI |
NPN Silicon Epitaxial Planar Transistor | |
11 | MMBT4124LT1G |
ON Semiconductor |
NPN Transistor | |
12 | MMBT4125 |
Samsung |
PNP (GENERAL PURPOSE TRANSISTOR) |