Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A Discrete POWER & Signal Technologies PN2907A MMBT2907A C PZT2907A C E C B E C B TO-92 E SOT-23 Mark: 2F B SOT-223 MMPQ2907 E B E B E B NMT2907 C2 E1 C1 C B2 E2 E B SOIC-16 C C C C C C C SOT-6 Mark: .2B B1 PNP General Purpose Amplifier This device is designed for use as a general pur.
ory should be consulted on applications involving pulsed or low duty cycle operations.
ã 1997 Fairchild Semiconductor Corporation
PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO Collector-Emitter Breakdown Voltage
* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Collector Cutoff Current IC = 10 mA, IB = 0 IC = 10 µ.
MMBT2907A - Diotec
MMBT2907A MMBT2907A SMD General Purpose PNP Transistors SMD Universal-PNP-Transistoren IC = -600 mA hFE1 = 100 ... 300.
MMBT2907A - Microsemi
9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 MMBT2907A Features • • Surface Mou.
MMBT2907A - Taiwan Semiconductor
Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity .
MMBT2907A - CITC
MMBT2907 / MMBT2907A 600mA General Purpose PNP Epitaxial Planar Transistor ■ Features • High collector-emitterbreakdien.
MMBT2907A - LITE-ON
PNP General Purpose Transistor MMBT2907A FEATURES • Ideal for Medium Power Amplification and Switching • Complementary.
MMBT2907A - UTC
This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 600 mA..
MMBT2907A - ON Semiconductor
• High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) The PN2907.
MMBT2907A - INCHANGE
·Low Voltage Use ·Ultra Super Mini Mold Package ·Minimum Lot-to-Lot variations for robust device performance and reliabl.
MMBT2907A - GME
Production specification PNP General Purpose Amplifier FEATURES Epitaxial planar die construction. Complementary N.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMBT2907 |
GME |
PNP General Purpose Amplifier |
|
| 2 | MMBT2907 |
MIC |
PNP Transistor |
|
| 3 | MMBT2907 |
ART CHIP |
PNP GENERAL PURPOSE AMPLIFIER |
|
| 4 | MMBT2907 |
HOTTECH |
SWITCHING TRANSISTOR |
|
| 5 | MMBT2907 |
Samsung |
PNP Transistor |
|
| 6 | MMBT2907 |
Fairchild |
PNP General Purpose Amplifier |
|
| 7 | MMBT2907 |
Diotec |
PNP Transistor |
|
| 8 | MMBT2907 |
Comchip Technology |
PNP Transistor |
|
| 9 | MMBT2907 |
SEMTECH |
PNP Transistor |
|
| 10 | MMBT2907 |
WEITRON |
PNP Transistor |
|
| 11 | MMBT2907 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 12 | MMBT2907 |
CITC |
PNP Transistor |
|