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MMBD717LT1G - ON Semiconductor

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MMBD717LT1G Schottky Barrier Diodes

SC−70 (SOT−323) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsem.

Features


• Extremely Fast Switching Speed
• Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1 mAdc
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C VR 20 V PF 200 mW 1.6 mW/°C Operating Junction Temperature Range TJ −55 to +150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Rec.

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