MMBD354LT1G - ON Semiconductor

MMBD354LT1G Dual Hot Carrier Mixer Diodes

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Features

• Very Low Capacitance − Less Than 1.0 pF @ Zero V
• Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Continuous Reverse Voltage VR 7.0 VCC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur a.