www.DataSheet4U.com MMBD2835LT1, MMBD2836LT1 Monolithic Dual Switching Diodes Features • Pb−Free Packages are Available MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current MMBD2835LT1 MMBD2836LT1 Symbol VR IF Value 35 75 100 Unit Vdc mAdc http://onsemi.com ANODE 3 CATHODE 1 2 CATHODE THERMAL CHARACTERISTICS Total Device Dissipation FR− .
• Pb−Free Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current MMBD2835LT1 MMBD2836LT1 Symbol VR IF Value 35 75 100 Unit Vdc mAdc
http://onsemi.com
ANODE 3
CATHODE 1 2 CATHODE
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD 225 mW
1 2 3
1.8 RqJA PD 556 300
mW/°C °C/W mW
SOT− 23 (TO −236AB) CASE 318 −08 STY.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD2835LT1/D Monolithic Dual Switching Diodes MMBD2835.
RoHS MMBD2836LT1 MONOL LTHIC DUAL SWITCHING DIODE .,LTD1 2 SOT-23 3 ANODE-CATHODE 3 A L 3 K BS 1 ANODE 2 CATHODE .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MMBD2836 |
Zowie Technology Corporation |
MONOLITHIC DUAL SWITCHING DIODE | |
2 | MMBD2836 |
JR |
Silicon Epitaxial Planar Switching Diode | |
3 | MMBD2836 |
GME |
Surface mount switching diode | |
4 | MMBD2836 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE | |
5 | MMBD2836 |
Weitron Technology |
Surface Mount Switching Diode | |
6 | MMBD2836 |
LGE |
Surface Mount Switching Diode | |
7 | MMBD2836 |
SEMTECH |
Dual Switching Diodes | |
8 | MMBD2836 |
Galaxy Electrical |
Surface mount switching diode | |
9 | MMBD2836GH |
Zowie Technology |
Monolithic Dual Switching Diode | |
10 | MMBD2835 |
JR |
Silicon Epitaxial Planar Switching Diode | |
11 | MMBD2835 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE | |
12 | MMBD2835 |
GME |
Surface mount switching diode |