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ZENER DIODE FEATURES˖ Planar Die Construction 200mW Power Dissipation on FR-4 PCB General purpose, Medium Current Ideally Suited for Automated Assembly P/N suffix V means AEC-Q101 qualified P/N suffix V means Halogen-free Marking: see table on page2 The first code MMBZ5221BW THRU MMBZ5259BW SOT- 323 Maximum Ratings(Ta= 25Я unless otherwise specified) Ch.
Planar Die Construction 200mW Power Dissipation on FR-4 PCB General purpose, Medium Current Ideally Suited for Automated Assembly P/N suffix V means AEC-Q101 qualified P/N suffix V means Halogen-free Marking: see table on page2 The first code MMBZ5221BW THRU MMBZ5259BW SOT- 323 Maximum Ratings(Ta= 25Я unless otherwise specified) Characteristic Forward Voltage @ IF = 10mA Power Dissipation Thermal Resistance, Junction to Ambient Air - XQFWLRQ Temperature Storage Temperature Range Symbol VF PD R©JA Tj TVWJ Value 0.9 200 625 -55 ~ +150 -55 ~ +150 Unit V mW Я/W Я Я 2018-01/02 REV:A (/.
MMBA5247BW - JCET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode MMBZ5221BW-MMBZ5259BW ZENER DIODE .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMBA |
Rubycon |
METALLIZED POLYESTER FILM CAPACITORS |
|
| 2 | MMBA811C5 |
Samsung |
PNP (DRIVER TRANSISTOR) |
|
| 3 | MMBA811C6 |
Samsung |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 4 | MMBA811C7 |
Samsung |
PNP (DRIVER TRANSISTOR) |
|
| 5 | MMBA811C8 |
Samsung |
PNP (DRIVER TRANSISTOR) |
|
| 6 | MMBA812M3 |
Samsung |
PNP (GENERAL PURPOSE TRANSISTOR) |
|
| 7 | MMBA812M4 |
Samsung |
PNP (GENERAL PURPOSE TRANSISTOR) |
|
| 8 | MMBA812M5 |
Samsung |
PNP (GENERAL PURPOSE TRANSISTOR) |
|
| 9 | MMBA812M6 |
Samsung |
PNP EPITAXIAL PLANAR TRANSISTOR(General Purpose Transistor) |
|
| 10 | MMBA812M7 |
Samsung |
PNP (GENERAL PURPOSE TRANSISTOR) |
|
| 11 | MMBAB11C6 |
Samsung |
PNP (DRIVER TRANSISTOR) |
|
| 12 | MMB |
Rubycon |
METALLIZED POLYESTER FILM CAPACITORS |
|