MM018-06L - Microsemi

MM018-06L 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

Short Circuit Reverse Current (RBSOA) @ Tj= 125° C, VCE= 0.8 x VCES Junction and Storage Temperature Range (° C) Continuous Source Current (parallel Diode) Pulse Source Current (parallel Diode) SYMBOL Imax Tj, Tstg IS ISM MM118-06 64 A -55 to +150 60 A 100 A MM118-12 66 A -55 to +150 50 A 100 A Electrical Parameters, per switch @ 25° C (unless otherwise spe.

Features

• Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF
• Compact and rugged construction offering weight and space savings
• Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “ T”suffix to part number, see option below)
• HPM (Hermetic Power Module)
• Isolation voltage capability (in reference to the base) in excess of 3kV
• Very low thermal resistance
• Thermally matched construction provides excellent temperature and power cycling capability
• Additional voltage ratings or terminations available upon request .