http://www.sanken-ele.co.jp SANKEN ELECTRIC MLD685D Features z z Low on-state resistance Built-in gate protection diode Package MT100 (TO3P) Feb. 2011 Applications z z Electric power steering High current switching Key Specifications z z V(BR)DSS=60V (ID=100μA) RDS(ON)=4.7mΩ Max. (VGS=10V,ID=42A) Internal Equivalent Circuit D(2) G(1) S(3) Absolute max.
z z Low on-state resistance Built-in gate protection diode Package MT100 (TO3P) Feb. 2011 Applications z z Electric power steering High current switching Key Specifications z z V(BR)DSS=60V (ID=100μA) RDS(ON)=4.7mΩ Max. (VGS=10V,ID=42A) Internal Equivalent Circuit D(2) G(1) S(3) Absolute maximum ratings Characteristic Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Channel Temperature Storage Temperature Symbol VDSS VGSS ID ID(pulse) ※1 PD EAS ※2 Tch Tstg Rating 60 ±20 ± 85 ± 280 1 50 (.
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MLD1N06CL |
Motorola |
VOLTAGE CLAMPED CURRENT LIMITING MOSFET | |
2 | MLD1N06CL |
ON Semiconductor |
Power MOSFET | |
3 | MLD2016S1R0MTD25 |
TDK |
INDUCTORS | |
4 | MLD2016S1R5MTD25 |
TDK |
INDUCTORS | |
5 | MLD2016S2R2MTD25 |
TDK |
INDUCTORS | |
6 | MLD2016S3R3MTD25 |
TDK |
INDUCTORS | |
7 | MLD2016S4R7MTD25 |
TDK |
INDUCTORS | |
8 | MLD2N06CL |
Motorola |
VOLTAGE CLAMPED CURRENT LIMITING MOSFET | |
9 | MLD2N06CL |
ON Semiconductor |
Power MOSFET | |
10 | MLD571 |
Micro |
ONE LAMP/LED DRIVER | |
11 | ML-102A |
Machlett Laboratories |
Rectifier | |
12 | ML-1250 |
Samsung |
User Manual |